polycrystalline silicon是什么意思

zhenzhida2022-10-04 11:39:541条回答

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事逐孤鸿去 共回答了18个问题 | 采纳率61.1%
polycrystalline silicon
多晶硅
polycrystalline silicon
多晶硅;
例句:
1.Standard pv modules are made from mono and polycrystalline silicon.
标准的光伏组件由单晶和多晶硅做成
1年前

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英语翻译The majority of PV solar cells are made from crystalline
英语翻译
The majority of PV solar cells are made from crystalline silicon,either single crystal or multi-crystalline silicon.This account for around 90% of the current production.The remainder comprises various forms of thin film solar cells where the absorber material is deposited onto a suitable substrate such as glass.The absorber materials for thin film cells are either amorphous/polycrystalline silicon or compound semiconductors such as cadmium telluride,gallium arsenide,copper indium diselenide etc.Organic solar cells in the form of either dye sensitized solar cells or polymer absorbers are a newer low cost PV option that until recently has been confined to the laboratory but a recent investment by G24i in Wales is set to produce large volumes of flexible,dye sensitized,solar cells for niche applications.
The common characteristic to all the inorganic absorber materials is that they are semiconductors where absorption of light results in excitation band as illustrated in Fig.1.
Unfortunately,not all the light can be absorbed in this way as the low energy photons,corresponding to the longer wavelengths of solar radiation will be insufficient to excite an electron hole pair.Selecting a very narrow band gap semiconductor absorber will result in more photons being absorbed but less voltage being produced.To achieve maximum power there is a compromise between the current (photons absorbed) and the voltage of the cell.This will result in a predicted optimum band gap for the absorber of around 1.3 eV and a maximum theoretical efficiency under normal terrestrial solar light of around 30%[1-3].Unfortunately this is only part of the process as the electrons excited into the conduction band in p-type semiconductors are unstable and will tend to recombine,releasing heat.A junction is needed to draw the photo-generated electrons into n-type material where they are stable and extract an electric current via an external circuit.The n-type side of the junction can be made of the same material or a different semiconductor material to the absorber.
The dominance of the PV solar market by silicon is partly historical but is also a result of the development of silicon for the electronics industry.PV solar energy has been able to ride on the back of the developments in electronics until recently when more high purity silicon was being produced for PV solar than for electronics.However,the absorption coefficient of silicon is poor ,because it is not a direct band gap semiconductor,which is why direct band gap compound semiconductors have been developed gap compound semiconductors have been developed for the thin film applications.In reality this means that crystalline silicon cells require approximately 200 m,whereas direct..Band gap semiconductors require only 1-2 m thickness of absorber.Thia factor will be discussed later in the context of cost of PV solar modules.
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大多数的光伏太阳能电池是由晶体硅,要么单晶或multi-crystalline硅.此帐号的大约90%的当前的生产.其余包括各种形式的薄膜太阳能电池的电磁波吸收材料的地方沉积到一个合适的基质的玻璃.吸收塔材料都是细胞薄膜非晶/多晶硅或化合物半导体如镉telluride,diselenide铟镓、铜等.有机太阳能电池在形式的或者染料太阳能电池或高分子器时是一种新的低成本光伏的选项,直到最近,不仅仅限于实验室但最近在威尔士g24投资将产生大量的灵活、染料增为特定领域的太阳能电池.
共同特征的无机吸收材料的地方,他们是半导体光的吸收了结果在励磁乐队在图1.
不幸的是,并不是所有的灯能全神贯注,因为那样低能量的光子,对应于更长的波长的太阳辐射不足使电子孔的一对.选择一个非常狭窄的带隙半导体吸收,将导致更多的光子吸收后产生电压却越来越少.达到最大的可能是目前之间的一种折衷光子吸收)和电压的细胞.这将导致预测吸收过程的优化带隙大约13电动汽车,最高理论效率在正常陆地太阳光大约30%的[1 - 3].不幸的是这只是冰山过程为电子兴奋到导带在p型半导体是不稳定的,就有可能重组,释放热量.一个连接是需要画出photo-generated电子束射入n型资料,在那里他们是稳定的,提取电流通过外部电路.该交接处的边的n型可由同一材料或者接受了一个不同的半导体材料到吸收器.
太阳能光伏主导市场研究历史也部分原因是由于硅晶片的技术发展为电子工业.光伏太阳能已能骑后面的发展电子直到最近当更多的高纯硅被制作太阳能光伏比电子产品.然而,硅的吸收系数差,因为这不是直接带隙半导体、这就是为什么直接带隙复合半导体已经发展差距复合半导体已经制定的薄膜的应用.事实上这意味着结晶矽电池大约需要200米,而直接.带隙半导体只需要1 - 2米避振器的厚度.这个盒子和那个因素将在后面讨论下的PV太阳能电池组件成本.
英语翻译polycrystalline diamond element comprising ultra-dispers
英语翻译
polycrystalline diamond element comprising ultra-dispersed diamond grain structures and applications utilizing same
拜托用百度翻译或者google翻译神马的就算了,我也会的。那样翻出来根本不对
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这应该是专利的title,应该翻译成一个名词短语.以下翻译供楼主参考.
具有超分散金刚砂结构的多晶金刚石元素及该元素的应用
翻译 采纳答案后追加50分3.3. Crystalline structureThe glassy systems in
翻译 采纳答案后追加50分
3.3. Crystalline structure
The glassy systems investigated presented a crystalline phase after the thermal treatment, exception made for frit D. Figs. 9 and 10 show the XRD patterns, after sintering, for frits B and D, respectively. We can see there the amorphous structure of the raw frit D (0 8C). In the case of the raw frit B, as well as for raw frits C and E (patterns not shown here), a crystalline structure already existed in the raw frit. The peaks at 38,5 and 44,88 2u refer to the aluminium in the sample support.
In the case of frit A, the results have shown that it remains amorphous until 800 8C and only after that it starts to form anorthite and diopside. At 920 8C, the sample exhibits a high amount of crystalline phase but, at 1050 8C, it is possible to notice a small decrease of the anorthite peak intensity, benefiting the growth of diopside. The final product also contains residual gehlenite.
The final product X-ray patterns for frit B are given in Fig. 11. It has been shown previously, in Fig. 9, that the raw sample contains spinel. Between 850 and 940 8C (first exothermic peak), the frit devitrificates leading to the formation of spodumene and a magnesium aluminosilicate (MgAl2- Si3O10). For this temperature, cordierite also crystallizes though in a very small amount. During the second crystallization peak, XRD continues to detect spodumene indicating, however, the additional production of cordierite and indialite which are, now, the main crystalline phases. Therefore, MgAl2Si3O10, formed during the first peak, was converted to form cordierite and indialite.
TheXRDresults for frit C showthat the rawmaterial contains vestigial celsian and baric orthoclase (K,Ba)(Si,Al)4O8. Celsian continues to form during the exothermic event (810–860 8C) becoming the principal crystalline structure. Banalsite formation is also detected during the exothermic peak.
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3.3 晶体结构
经热处理后,除了玻璃样本D,该种玻璃结构都呈现晶体化的痕迹.图9和10分别为B、D玻璃样本在烧结后的XRD分析图.从图中我们可以看到D号样本在8摄氏度下的无组织结构.而对于样本B,C,E(图片欠奉),处理前就已经存在晶体结构.在38.5和44.88 2U两处的峰值表示样本中的铝含量.
样本A的无组织状态直到温度达到800.8摄氏度才被破坏.之后该样本中开始出现钙长石(anorthite)和透辉石(anorthite).在920.8摄氏度下样本中开始出现大面积结晶状态.但在1050.8摄氏度时,我们看到钙长石含量的峰值有所下降,并造成透辉石含量上升.样本的最终产品中也含有钙黄长石的残余.
从图11中我们可以看到样本B的最终产品的X光图.我们从图9中可以看到,样本在处理前已经含有尖晶石成分.在850到940.8摄氏度之间(即第一个放热高峰),样本中的玻璃结构被破坏,从而导致锂辉石(spodumene)以及镁铝矽酸盐(MgAl2- Si3O10)的形成.在此温度下,堇青石(cordierite)也开始结晶化,尽管幅度很小.在第2个结晶化高峰间,XRD分析显示锂辉石(spodumene)仍然存在,但主要的结晶态为额外产生的堇青石(cordierite)和印度石(indialite).由此可见,第一个高峰区间产生的镁铝矽酸盐(MgAl2Si3O10)转化形成了堇青石和印度石.
样本C的XRD分析结果显示该样本中含有:钡长石的不完全形态以及含钡的正长石(K,Ba)(Si,Al)4O8.钡长石在810到860.8摄氏度间放热时仍然继续产生,并成为样品中主要的晶体结构.在上述放热区间,钡钠长石(Banalsite)也有一定程度的形成.
翻的术语可能有些偏差.不过可以保证语法通顺了.
段落与原文一一对应.
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英语翻译
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英语翻译
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